Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

STF28N65M2 Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce STF28N65M2
Description  Extremely low gate charge
Download  22 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF28N65M2 Fiches technique(HTML) 4 Page - STMicroelectronics

  STF28N65M2 Datasheet HTML 1Page - STMicroelectronics STF28N65M2 Datasheet HTML 2Page - STMicroelectronics STF28N65M2 Datasheet HTML 3Page - STMicroelectronics STF28N65M2 Datasheet HTML 4Page - STMicroelectronics STF28N65M2 Datasheet HTML 5Page - STMicroelectronics STF28N65M2 Datasheet HTML 6Page - STMicroelectronics STF28N65M2 Datasheet HTML 7Page - STMicroelectronics STF28N65M2 Datasheet HTML 8Page - STMicroelectronics STF28N65M2 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 22 page
background image
Electrical characteristics
STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2
4/22
DocID027256 Rev 1
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
VGS = 0, ID = 1 mA
650
V
IDSS
Zero gate voltage
drain current
VGS = 0, VDS = 650 V
1
µA
VGS = 0, VDS = 650 V
TC = 125 °C
100
µA
IGSS
Gate-body leakage
current
VDS = 0, VGS = ± 25 V
±10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 10 A
0.15
0.18
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
1440
-
pF
Coss
Output capacitance
-
60
-
pF
Crss
Reverse transfer
capacitance
-2-
pF
Coss eq
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 520 V
-
307
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
4.9
-
Qg
Total gate charge
VDD = 520 V, ID = 20 A,
VGS = 10 V
(see Figure 19)
-35
-
nC
Qgs
Gate-source charge
-
6
-
nC
Qgd
Gate-drain charge
-
15
-
nC
Table 7. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 325 V, ID = 10 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18 and Figure 23)
-13.4
-
ns
tr
Rise time
-
10
-
ns
td(off)
Turn-off delay time
-
59
-
ns
tf
Fall time
-
8.8
-
ns


Numéro de pièce similaire - STF28N65M2

FabricantNo de pièceFiches techniqueDescription
logo
STMicroelectronics
STF28N60DM2 STMICROELECTRONICS-STF28N60DM2 Datasheet
717Kb / 12P
   N-channel 600 V, 0.13 廓 typ., 21 A MDmesh??DM2 Power MOSFET in a TO-220FP package
October 2015 Rev 2
STF28N60M2 STMICROELECTRONICS-STF28N60M2 Datasheet
827Kb / 15P
   N-channel 600 V, 0.135 typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages
More results

Description similaire - STF28N65M2

FabricantNo de pièceFiches techniqueDescription
logo
STMicroelectronics
STWA48N60M2 STMICROELECTRONICS-STWA48N60M2 Datasheet
776Kb / 12P
   Extremely low gate charge
December 2015 Rev 1
STL7N60M2 STMICROELECTRONICS-STL7N60M2 Datasheet
310Kb / 13P
   Extremely low gate charge
January 2015 Rev 1
STD7N60M2 STMICROELECTRONICS-STD7N60M2 Datasheet
1Mb / 21P
   Extremely low gate charge
June 2013 Rev 1
STB28N60M2 STMICROELECTRONICS-STB28N60M2 Datasheet
1Mb / 21P
   Extremely low gate charge
STD11N65M2 STMICROELECTRONICS-STD11N65M2 Datasheet
1Mb / 21P
   Extremely low gate charge
May 2014 Rev 1
STF5N60M2 STMICROELECTRONICS-STF5N60M2 Datasheet
743Kb / 13P
   Extremely low gate charge
June 2016 Rev 2
STF7N65M2 STMICROELECTRONICS-STF7N65M2 Datasheet
904Kb / 13P
   Extremely low gate charge
August 2014 Rev 2
STL13N65M2 STMICROELECTRONICS-STL13N65M2 Datasheet
642Kb / 16P
   Extremely low gate charge
December 2014 Rev 1
STL19N60M2 STMICROELECTRONICS-STL19N60M2 Datasheet
770Kb / 15P
   Extremely low gate charge
January 2016 Rev 1
STW56N65M2 STMICROELECTRONICS-STW56N65M2 Datasheet
730Kb / 12P
   Extremely low gate charge
December 2014 Rev 1
STB24N65M2 STMICROELECTRONICS-STB24N65M2 Datasheet
1Mb / 20P
   Extremely low gate charge
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com