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STP24N65M2 Fiches technique(PDF) 5 Page - STMicroelectronics |
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STP24N65M2 Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 20 page STB24N65M2, STF24N65M2, STP24N65M2 Electrical characteristics DocID026475 Rev 2 5/20 Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 16 A ISDM(1) Source-drain current (pulsed) - 64 A VSD(2) Forward on voltage ISD = 16 A, VGS = 0 - 1.6 V trr Reverse recovery time ISD = 16 A, di/dt = 100 A/µs VDD = 60 V - 350 ns Qrr Reverse recovery charge - 4.5 µC IRRM Reverse recovery current - 26 A trr Reverse recovery time ISD = 16 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C - 496 ns Qrr Reverse recovery charge - 6.5 µC IRRM Reverse recovery current - 25.5 A Notes: (1)Pulse width limited by safe operating area. (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% |
Numéro de pièce similaire - STP24N65M2 |
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Description similaire - STP24N65M2 |
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