STD13NM60N datasheet(3/24 Pages) STMICROELECTRONICS

No de pièce	STD13NM60N

Description	Low gate input resistance

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STB13NM60N, STD13NM60N

Electrical ratings

24

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

600

V

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

11

A

ID

Drain current (continuous) at TC = 100 °C

6.93

A

IDM

(1)

1.

Pulse width limited by safe operating area

Drain current (pulsed)

44

A

PTOT

Total dissipation at TC = 25 °C

90

W

dv/dt (2)

2.

ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

Peak diode recovery voltage slope

15

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D²PAK

DPAK

Rthj-case Thermal resistance junction-case max

1.39

°C/W

Rthj-pcb

Thermal resistance junction-pcb max

30

50

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

3.5

A

EAS

Single pulse avalanche energy

(starting TJ=25 °C, ID=IAS, VDD=50 V)

200

mJ

Numéro de pièce similaire - STD13NM60N

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STD13NM60N	989Kb / 21P	N-channel 600 V, 0.28 廓 typ., 11 A MDmesh??II Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247 packages
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