STP20N90K5 datasheet(4/13 Pages) STMICROELECTRONICS

No de pièce	STP20N90K5

Description	N-channel 900 V, 0.21 廓 typ., 20 A MDmesh??K5 Power MOSFET in a TO-220 package

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Electrical characteristics

STP20N90K5

4/13

DocID029148 Rev 3

2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

900

V

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 900 V

1

µA

VGS = 0 V, VDS = 900 V

TC = 125 °C(1)

50

µA

IGSS

Gate body leakage current

VDS = 0 V, VGS = ±20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

3

4

5

V

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 10 A

0.21

0.25

Ω

Notes:

(1) Defined by design, not subject to production test

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

-

1500

-

pF

Coss

Output capacitance

-

120

-

pF

Crss

Reverse transfer capacitance

-

1

-

pF

Co(er)(1)

Equivalent capacitance time

VGS = 0 V

-

78

-

pF

Co(tr)(2)

Equivalent capacitance energy

-

pF

Rg

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

-

3.7

-

Ω

Qg

Total gate charge

VDD = 720 V, ID = 20 A

VGS= 10 V

(see Figure 14: "Test

circuit for gate charge

behavior")

-

40

-

nC

Qgs

Gate-source charge

-

14

-

nC

Qgd

Gate-drain charge

-

17

-

nC

Notes:

(1)Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to

80% VDSS.

(2)Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to

80% VDSS.

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