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STD165GK18 Fiches technique(PDF) 2 Page - Sirectifier Semiconductors

No de pièce STD165GK18
Description  Thyristor-Diode Modules
Download  4 Pages
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Fabricant  SIRECTIFIER [Sirectifier Semiconductors]
Site Internet  http://www.sirectifier.com
Logo SIRECTIFIER - Sirectifier Semiconductors

STD165GK18 Fiches technique(HTML) 2 Page - Sirectifier Semiconductors

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Thyristor-Diode Modules
Symbol
Test Conditions
Characteristic Values
Unit
V
VT, VF
IT, IF=300A; TVJ=25oC
1.36
VTO
For power-loss calculations only (TVJ=TVJM)
0.8
V
rT
1.6
m
VD=6V;
TVJ=25oC
TVJ=-40oC
VGT
2
2.6
V
VD=6V;
TVJ=25oC
TVJ=-40oC
IGT
150
200
mA
VGD
TVJ=TVJM;
VD=2/3VDRM
0.25
V
IGD
10
mA
IH
TVJ=25oC; VD=6V; RGK=
150
mA
TVJ=25oC; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us
200
mA
IL
per thyristor/diode; DC current
per module
RthJC
0.155
0.0775
K/W
per thyristor/diode; DC current
per module
RthJK
0.225
0.1125
K/W
dS
Creeping distance on surface
12.7
mm
dA
Creepage distance in air
9.6
mm
a
Maximum allowable acceleration
50
m/s2
IRRM, IDRM
TVJ=TVJM; VR=VRRM; VD=VDRM
40
mA
TVJ=25oC; VD=1/2VDRM
IG=0.5A; diG/dt=0.5A/us
tgd
2
us
TVJ=TVJM; IT=160A; tp=200us; -di/dt=10A/us
typ.
VR=100V; dv/dt=20V/us; VD=2/3VDRM
tq
150
us
uC
QS
TVJ=TVJM; IT, IF=300A; -di/dt=50A/us
550
IRM
235
A
FEATURES
* International standard package
* Glass passivated chips
* Isolation voltage 3600 V~
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
TVJ=TVJM;
VD=2/3VDRM
* DCB base plate
STD165GKXX
* UL File NO.E310749
* RoHS compliant
P2
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com


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