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STF8N90K5 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STF8N90K5
Description  N-channel 900 V, 0.60typ., 8 A MDmesh??K5 Power MOSFET in a TO-220FP package
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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STF8N90K5
Electrical ratings
DocID030081 Rev 1
3/13
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±30
V
ID(1)
Drain current (continuous) at TC = 25 °C
8
A
ID(1)
Drain current (continuous) at TC = 100 °C
5
A
ID(2)
Drain current pulsed
32
A
PTOT
Total dissipation at TC = 25 °C
30
W
VISO
Insulation withstand voltage (RMS) from all three leads to external
heat sink (t = 1 s; TC = 25 °C)
2500
V
dv/dt (3)
Peak diode recovery voltage slope
4.5
V/ns
dv/dt (4)
MOSFET dv/dt ruggedness
50
Tj
Operating junction temperature range
-55 to 150
°C
Tstg
Storage temperature range
Notes:
(1)Limited by maximum junction temperature.
(2)Pulse width limited by safe operating area
(3)ISD ≤ 8 A, di/dt ≤ 100 A/μs; VDS peak ≤ V(BR)DSS
(4)VDS ≤ 720 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
4.2
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive
(pulse width limited by TJ max)
2.7
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
250
mJ


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