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CS5451 Fiches technique(PDF) 10 Page - List of Unclassifed Manufacturers |
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CS5451 Fiches technique(HTML) 10 Page - List of Unclassifed Manufacturers |
10 / 14 page CS5451 10 DS458PP4 nal. The frequency of the charge pump driver sig- nal is synchronous to XIN. The nominal average frequency is 1 Mhz. The level on the VA- pin is fed back internally so that the CPD output will regulate the VA- level to -2/3 of VA+ level. Note the value of C1 in Figure 5. The 40 nF value is recommended when the input frequency present- ed to the XIN pin is 4.00 MHz. If the user decides to use an XIN frequency that is significantly differ- ent than 4.00 MHz (if the XIN frequency is in- creased/decreased by more than 5% of 4.00 MHz, then it is recommended that the user should alter the value of C1. The percentage change in the value of C1 (with respect to a reference value of 40 nF) should be inversely proportional to the percentage change in the XIN frequency. For example, if the XIN frequency is increased from 4.00 MHz to 4.5 MHz, this represents a percentage increase of 12.5%. Therefore, the value of C1 should be re- duced by 12.5%, making the new value for C1 to be 35 nF. For more information about the operation of this type of charge pump circuit, the reader can re- fer to Cirrus Logic, Inc.’s application note AN152: Using the CS5521/24/28, and CS5525/26 Charge Pump Drive for External Loads. 2.9 PCB Layout For optimal performance, the CS5460A should be placed entirely over an analog ground plane with both the VA- and DGND pins of the device con- nected to the analog plane. Place the analog-digital plane split immediately adjacent to the digital por- tion of the chip. Note: Refer to the CDB5460A Evaluation Board for suggested layout details and Applications Note 18 for more detailed layout guidelines. Before layout, please call for our Free Schematic Review Service. AGND BAT 85 D1 C1 40 nF C2 CPD VA- BAT 85 1µF D2 Figure 5. Generating VA- with a Charge Pump |
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