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AM29F016-150EIB Fiches technique(PDF) 2 Page - Advanced Micro Devices |
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AM29F016-150EIB Fiches technique(HTML) 2 Page - Advanced Micro Devices |
2 / 36 page 2 Am29F016 ded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Erase is accomplished by executing the erase command sequence. This will in- voke the Embedded Erase Algorithm which is an inter- nal algorithm that automatically preprograms the array if it is not already programmed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. This device also features a sector erase architecture. This allows for sectors of memory to be erased and re- programmed without affecting the data contents of other sectors. A sector is typically erased and verified within one second. The Am29F016 is erased when shipped from the factory. The Am29F016 device also features hardware sector group protection. This feature will disable both pro- gram and erase operations in any combination of eight sector groups of memory. A sector group consists of four adjacent sectors grouped in the following pattern: sectors 0–3, 4–7, 8–11, 12–15, 16–19, 20–23, 24–27, and 28–31. AMD has implemented an Erase Suspend feature that enables the user to put erase on hold for any period of time to read data from, or program data to, a sector that was not being erased. Thus, true background erase can be achieved. The device features single 5.0 Volt power supply oper- ation for both read and write functions. Internally gen- erated and regulated voltages are provided for the program and erase operations. A low VCC detector au- tomatically inhibits write operations during power tran- sitions. The end of program or erase is detected by the RY/BY pin, Data Polling of DQ7, or by the Toggle Bit I (DQ6).Once the end of a program or erase cycle has been completed, the device automatically resets to the readmode. The Am29F016 also has a hardware RESET pin. When this pin is driven low, execution of any Embed- ded Program Algorithm or Embedded Erase Algorithm will be terminated. The internal state machine will then be reset into the read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device will be auto- matically reset to the read mode. This will enable the system’s microprocessor to read the boot-up firmware from the Flash memory. AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highes t leve l s of qual ity, r e lia bili ty and c o st effectiveness. The Am29F016 memory electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are pro- grammed one byte at a time using the EPROM pro- gramming mechanism of hot electron injection. Flexible Sector-Erase Architecture s Thirty two 64 Kbyte sectors s Eight sector groups each of which consists of 4 adjacent sectors in the following pattern: sectors 0 –3, 4–7, 8–11, 12–15, 16–19, 20–23, 24–27, and 28 –31. s Individual-sector or multiple-sector erase capability s Sector group protection is user-definable 18805D-1 SA31 SA30 SA29 SA28 SA3 SA2 SA1 SA0 1FFFFFh 1EFFFFh 1DFFFFh 1CFFFFh 1BFFFFh 1AFFFFh 19FFFFh 18FFFFh 17FFFFh 16FFFFh 15FFFFh 14FFFFh 13FFFFh 12FFFFh 11FFFFh 10FFFFh 1FFFFFh 1EFFFFh 1DFFFFh 1CFFFFh 1BFFFFh 1AFFFFh 09FFFFh 08FFFFh 07FFFFh 06FFFFh 05FFFFh 04FFFFh 03FFFFh 02FFFFh 01FFFFh 00FFFFh 000000h Sector Group 7 Sector Group 0 64 Kbyte 64 Kbyte 64 Kbyte 64 Kbyte 64 Kbyte 64 Kbyte 64 Kbyte 64 Kbyte 32 Sectors Total |
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Description similaire - AM29F016-150EIB |
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