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SI4682DY Fiches technique(PDF) 1 Page - Vishay Siliconix

No de pièce SI4682DY
Description  N-Channel 30 V (D-S) MOSFET
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4682DY Fiches technique(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si4682DY
Document Number: 73317
S11-0209-Rev. D, 14-Feb-11
www.vishay.com
1
N-Channel 30 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Extremely Low Qgd for Low Switching Losses
TrenchFET® Power MOSFET
100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
High-Side DC/DC Conversion
- Notebook
- Server
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A)
a
Qg (Typ.)
30
0.0094 at VGS = 10 V
16
11 nC
0.0135 at VGS = 4.5 V
13
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4682DY-T1-E3 (Lead (Pb)-free)
Si4682DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
D
S
D
S
D
S
D
N-Channel MOSFET
G
D
S
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 90 °C/W.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
16
A
TC = 70 °C
12.9
TA = 25 °C
12b, c
TA = 70 °C
9.5b, c
Pulsed Drain Current
IDM
50
Continuous Source-Drain Diode Current
TC = 25 °C
IS
4.0
TA = 25 °C
2.3b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
20
Avalanche Energy
EAS
20
mJ
Maximum Power Dissipation
TC = 25 °C
PD
4.45
W
TC = 70 °C
2.85
TA = 25 °C
2.50b, c
TA = 70 °C
1.6b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
t
≤ 10 s
RthJA
36
50
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
22
28


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