BC807-16W datasheet(1/5 Pages) BILIN

No de pièce	BC807-16W

Description	PNP Silicon Epitaxial Planar Transistor

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Fabricant	BILIN [Galaxy Semi-Conductor Holdings Limited]

Site Internet	http://www.galaxycn.com

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Production specification

PNP Silicon Epitaxial Planar Transistor

BC807W

F044

www.gmicroelec.com

Rev.A

1

FEATURES

For general AF applications.

High collector current.

High current gain.

Low collector-emitter saturation voltage.

Complements the BC817W.

APPLICATIONS

SOT-323

For general purpose amplification and switching.

ORDERING INFORMATION

Type No.

Marking

Package Code

BC807-16W/25W/40W

5A/5B/5C

SOT-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-45

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-500

mA

ICM

Peak Collector Current

-1

A

IB

Base Current

-0.1

A

IBM

Peak Base Ccurrent

-0.2

A

PC

Collector Dissipation

250

mW

Tj,Tstg

Junction and Storage Temperature

-65 to +150

℃

Pb

Lead-free

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