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74HCT00N Fiches technique(PDF) 5 Page - NXP Semiconductors |
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74HCT00N Fiches technique(HTML) 5 Page - NXP Semiconductors |
5 / 17 page 2003 Jun 30 5 Philips Semiconductors Product specification Quad 2-input NAND gate 74HC00; 74HCT00 RECOMMENDED OPERATING CONDITIONS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). Note 1. For DIP14 packages: above 70 °C derate linearly with 12 mW/K. For SO14 packages: above 70 °C derate linearly with 8 mW/K. For SSOP14 and TSSOP14 packages: above 60 °C derate linearly with 5.5 mW/K. For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K. SYMBOL PARAMETER CONDITIONS 74HC00 74HCT00 UNIT MIN. TYP. MAX. MIN. TYP. MAX. VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 − VCC 0 − VCC V VO output voltage 0 − VCC 0 − VCC V Tamb operating ambient temperature see DC and AC characteristics per device −40 +25 +125 −40 +25 +125 °C tr,tf input rise and fall times VCC = 2.0 V −− 1000 −−− ns VCC = 4.5 V − 6.0 500 − 6.0 500 ns VCC = 6.0 V −− 400 −−− ns SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage −0.5 +7.0 V IIK input diode current VI < −0.5 V or VI >VCC + 0.5 V −±20 mA IOK output diode current VO < −0.5 V or VO >VCC + 0.5 V −±20 mA IO output source or sink current −0.5V<VO <VCC + 0.5 V −±25 mA ICC, IGND VCC or GND current −±50 mA Tstg storage temperature −65 +150 °C Ptot power dissipation Tamb = −40 to +125 °C; note 1 − 500 mW |
Numéro de pièce similaire - 74HCT00N |
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Description similaire - 74HCT00N |
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