SI7718DN datasheet(2/7 Pages) VISHAY

No de pièce	SI7718DN

Description	N-Channel 30-V (D-S) MOSFET

Download	7 Pages

Scroll/Zoom	100%

Fabricant	VISHAY [Vishay Siliconix]

Site Internet	http://www.vishay.com

Logo

2 / 7 page

www.vishay.com

2

Document Number: 68698

S-81584-Rev. A, 07-Jul-08

Vishay Siliconix

Si7718DN

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

30

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

30

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

- 5

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS , ID = 250 µA

1.2

2.5

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

µA

VDS = 30 V, VGS = 0 V, TJ = 55 °C

10

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

20

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 10 A

0.0048

0.006

Ω

VGS = 4.5 V, ID = 7 A

0.0065

0.0082

Forward Transconductancea

gfs

VDS = 15 V, ID = 10 A

50

S

Dynamicb

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

1600

pF

Output Capacitance

Coss

335

Reverse Transfer Capacitance

Crss

115

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 10 A

30

45

nC

VDS = 15 V, VGS = 4.5 V, ID = 10 A

13.7

21

Gate-Source Charge

Qgs

4.3

Gate-Drain Charge

Qgd

4.3

Gate Resistance

Rg

f = 1 MHz

0.3

0.75

1.5

Ω

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 1.5 Ω

ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω

22

35

ns

Rise Time

tr

13

26

Turn-Off Delay Time

td(off)

26

45

Fall Time

tf

12

24

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 1.5 Ω

ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω

13

26

Rise Time

tr

918

Turn-Off Delay Time

td(off)

22

35

Fall Time

tf

816

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

35

A

Pulse Diode Forward Current

ISM

70

Body Diode Voltage

VSD

IS = 3 A, VGS = 0 V

0.75

1.1

V

Body Diode Reverse Recovery Time

trr

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

19

35

ns

Body Diode Reverse Recovery Charge

Qrr

9.5

18

nC

Reverse Recovery Fall Time

ta

11

ns

Reverse Recovery Rise Time

tb

8

Numéro de pièce similaire - SI7718DN

Fabricant	No de pièce	Fiches technique	Description
Vishay Telefunken	SI7716AD	543Kb / 13P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI7716ADN	115Kb / 7P	N-Channel 30-V (D-S) MOSFET Rev. A, 23-Jun-08
SHENZHEN DOINGTER SEMIC...	SI7716ADN	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
Vishay Siliconix	SI7716ADN	618Kb / 13P	N-Channel 30 V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI7716ADN	618Kb / 13P	N-Channel 30 V (D-S) MOSFET 01-Jan-2022

More results

Description similaire - SI7718DN

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI3456DV	61Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. B, 23-Nov-98
	SUU50N03-12P	60Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. A, 15-Sep-03
	SI4894DY	129Kb / 3P	N-Channel 30-V (D-S) MOSFET 17-May-04
	SI4406DY	38Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. C, 26-May-03
	SI7380DP	180Kb / 3P	N-Channel 30-V (D-S) MOSFET 24-May-04
	SI733ADP	61Kb / 5P	N-Channel 30-V (D-S) MOSFET Rev. A, 25-Oct-04
	SI4892DY	71Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. F, 01-Aug-05
Vaishali Semiconductor	SI4356ADY	143Kb / 3P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SIRA00DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA14DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 12-Mar-12

More results

SI7718DN Fiches technique(PDF) 2 Page - Vishay Siliconix

SI7718DN Fiches technique(HTML) 2 Page - Vishay Siliconix

Numéro de pièce similaire - SI7718DN

Description similaire - SI7718DN

Html Pages

1 2 3 4 5 6 7

Fiches technique Télécharger

Lien URL