SI7138DP datasheet(5/7 Pages) VISHAY

No de pièce	SI7138DP

Description	N-Channel 60 V (D-S) Reduced Qgd, Fast Switching MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 73530

S11-0212-Rev. C, 14-Feb-11

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Vishay Siliconix

Si7138DP

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

20

40

60

80

100

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Limited by Package

Power Derating (Junction-to-Case)

0

20

40

60

80

100

25

50

75

100

125

150

TC - Case Temperature (°C)

Maximum Single Pulse Avalanche Capability

Time (s)

100

10

0.000001

0.00001

0.0001

0.001

T

A =

Lx ID

BV - V

DD

80

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