Moteur de recherche de fiches techniques de composants électroniques |
|
SI7862ADP Fiches technique(PDF) 4 Page - Vishay Siliconix |
|
SI7862ADP Fiches technique(HTML) 4 Page - Vishay Siliconix |
4 / 12 page www.vishay.com 4 Document Number: 73165 S-80438-Rev. C, 03-Mar-08 Vishay Siliconix Si7862ADP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Threshold Voltage -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (° C) Single Pulse Power 0 120 200 40 80 Time (s) 160 110 0.1 0.01 0.001 Safe Operating Area Junction-to-Case 100 1 0.01 1 10 100 0.01 10 0.1 0.1 1ms TC = 25 °C Single Pulse 10 ms 100 ms DC 10 s Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1s Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 600 10-1 10-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 50 °C/W 3. TJM -- TA =PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
Numéro de pièce similaire - SI7862ADP |
|
Description similaire - SI7862ADP |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |