Moteur de recherche de fiches techniques de composants électroniques |
|
SI7317DN Fiches technique(PDF) 2 Page - Vishay Siliconix |
|
SI7317DN Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 13 page Si7317DN www.vishay.com Vishay Siliconix S15-2640-Rev. B, 16-Nov-15 2 Document Number: 62892 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 81 °C/W. Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient a, b t 10 s RthJA 31 39 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 56.3 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = -250 μA -150 - - V VDS Temperature Coefficient V DS/TJ ID = -250 μA - -150 - mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ -5.7 - Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 μA -2.5 - -4.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 30 V - - -100 nA Zero Gate Voltage Drain Current IDSS VDS = -150 V, VGS = 0 V - - -1 μA VDS = -150 V, VGS = 0 V, TJ = 55 °C - - -10 On-State Drain Current a ID(on) VDS 15 V, VGS = -10 V -1.6 - - A Drain-Source On-State Resistance a RDS(on) VGS = -10 V, ID = -0.5 A - 1 1.2 VGS = -6 V, ID = -0.5 A - 1.05 1.3 Forward Transconductance a gfs VDS = -15 V, ID = -0.5 A - 3 - S Dynamic b Input Capacitance Ciss VDS = -75 V, VGS = 0 V, f = 1 MHz - 243 365 pF Output Capacitance Coss -15- Reverse Transfer Capacitance Crss -11- Total Gate Charge Qg VDS = -75 V, VGS = -10 V, ID = -1.1 A -6.5 9.8 nC Gate-Source Charge Qgs -1.5 - Gate-Drain Charge Qgd -1.9 - Gate Resistance Rg f = 1 MHz 1.1 5.5 11 Turn-On Delay Time td(on) VDD = -75 V, RL = 83.3 ID -0.9 A, VGEN = -10 V, Rg = 1 -7 11 ns Rise Time tr -11 20 Turn-Off Delay Time td(off) -11 20 Fall Time tf -10 20 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - - -16 A Pulse Diode Forward Current ISM -- -2 Body Diode Voltage VSD IS = -0.9 A, VGS = 0 V - -0.8 -1.2 V Body Diode Reverse Recovery Time trr IF = -0.9 A, dI/dt = 100 A/μs, TJ = 25 °C -32 48 ns Body Diode Reverse Recovery Charge Qrr -48 72 nC Reverse Recovery Fall Time ta -27- ns Reverse Recovery Rise Time tb -5- |
Numéro de pièce similaire - SI7317DN |
|
Description similaire - SI7317DN |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |