SI5415EDU datasheet(3/9 Pages) VISHAY

No de pièce	SI5415EDU

Description	P-Channel 20 V (D-S) MOSFET

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Si5415EDU

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Vishay Siliconix

S13-0789-Rev. A, 15-Apr-13

3

Document Number: 62837

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Gate Current vs. Gate-Source Voltage

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Capacitance

0.00

4.00

8.00

12.00

16.00

20.00

0

4

8

12

16

V

GS - Gate-Source Voltage (V)

T

J = 25 °C

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

0

4

8

12

16

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

0

20

40

60

80

0.0

0.5

1.0

1.5

2.0

2.5

3.0

V

DS - Drain-to-Source Voltage (V)

V

GS = 2 V

V

GS = 2.5 V

V

GS = 5 V thru 3 V

V

GS = 1.5 V

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

V

GS - Gate-to-Source Voltage (V)

T

C = 25 °C

T

C = 125 °C

T

C = - 55 °C

0.000

0.010

0.020

0.030

0.040

0

20

40

60

80

I

D - Drain Current (A)

V

GS = 1.8 V

V

GS = 3.7 V

V

GS = 2.5 V

V

GS = 4.5 V

0.050

0

1000

2000

3000

4000

5000

6000

7000

0

4

8

12

16

20

V

DS - Drain-to-Source Voltage (V)

C

iss

C

oss

C

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Fabricant	No de pièce	Fiches technique	Description
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