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SI2334DS Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI2334DS Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si2334DS New Product Document Number: 66802 S10-1533-Rev. A, 19-Jul-10 www.vishay.com 1 N-Channel 30 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter for Portable Devices • Load Switch PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) a Qg (Typ.) 30 0.044 at VGS = 4.5 V 4.9 3.7 nC 0.050 at VGS = 2.5 V 4.6 G S D Top View 2 3 TO-236 (SOT-23) 1 Si2334DS (PS)* * Marking Code Ordering Information: Si2334DS-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G D S Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 4.9 A TC = 70 °C 3.9 TA = 25 °C 4.2b, c TA = 70 °C 3.4b, c Pulsed Drain Current IDM 10 Continuous Source-Drain Diode Current TC = 25 °C IS 1.4 TA = 25 °C 1.1b, c Maximum Power Dissipation TC = 25 °C PD 1.7 W TC = 70 °C 1.1 TA = 25 °C 1.3b, c TA = 70 °C 0.8b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t 5 s RthJA 80 100 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 60 75 |
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