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SI1480DH Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI1480DH Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 12 page Vishay Siliconix Si1480DH Document Number: 67327 S12-2727-Rev. A, 12-Nov-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com N-Channel 100 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET •100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load Switches • DC/DC Converters • Power Management • LED Backlighting Notes: a. Package Limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 0.200 at VGS = 10 V 2.6a 1.8 0.320 at VGS = 4.5 V 2.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) a TC = 25 °C ID 2.6a A TC = 70 °C 2.2 TA = 25 °C 2.1b,c TA = 70 °C 1.7b,c Pulsed Drain Current (t = 300 µs) IDM 7 Avalanche Current L = 0.1 mH IAS 2.4 Repetitive Avalanche Energy EAS 0.29 mJ Continuous Source-Drain Diode Current TC = 25 °C IS 2.3 A TA = 25 °C 1.3b,c Maximum Power Dissipationa TC = 25 °C PD 2.8 W TC = 70 °C 1.8 TA = 25 °C 1.5b,c TA = 70 °C 1b,c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb,d t 5 s RthJA 60 80 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 34 45 Ordering Information: Si1480DH-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code AU XX Lot Traceability and Date Code Part # Code SOT-363 SC-70 (6-LEADS) 6 4 1 2 3 5 Top View D D G D D S N-Channel MOSFET G D S |
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