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IRF9610S Fiches technique(PDF) 4 Page - Vishay Siliconix |
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IRF9610S Fiches technique(HTML) 4 Page - Vishay Siliconix |
4 / 10 page IRF9610S, SiHF9610S www.vishay.com Vishay Siliconix S12-1558-Rev. D, 02-Jul-12 4 Document Number: 91081 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 6 - Typical Transconductance vs. Drain Current Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Breakdown Voltage vs. Temperature Fig. 9 - Normalized On-Resistance vs. Temperature Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage 2.0 ID, Drain Current (A) - 0.48 - 0.96 - 1.44 - 1.92 - 2.40 0 T J = 25 °C T J = - 55 °C 91081_06 T J = 125 °C 80 µs Pulse Test V DS > ID(on) x RDS(on) max. 1.6 1.2 0.8 0.4 0.0 T J = 25 °C T J = 150 °C - 10.0 VSD, Source-to-Drain Voltage (V) - 2.0 - 6.8 - 5.6 - 4.4 - 3.2 91081_07 - 0.1 - 0.2 - 0.5 - 1.0 - 2.0 - 5.0 - 8.0 91081_08 TJ, Junction Temperature (°C) 1.25 1.15 0.75 0.85 0.95 1.05 - 40 160 120 80 40 0 91081_09 TJ, Junction Temperature (°C) 2.5 2.0 0.0 0.5 1.0 1.5 - 40 160 120 80 40 0 I D = - 0.6 A V GS = - 10 V 91081_10 VDS, Drain-to-Source Voltage (V) 500 0 100 200 300 400 0 - 50 - 40 - 30 - 20 - 10 C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + C gs, Cgd C gs + Cgd ≈ C gs + Cgd QG, Total Gate Charge (nC) 20 16 12 8 0 4 02 8 6 4 V DS = - 40 V V DS = - 60 V For test circuit see figure 18 V DS = - 100 V 91081_11 I D = - 1.8 A |
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