IRF9Z20, SiHF9Z20

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Vishay Siliconix

S16-0015-Rev. C, 18-Jan-16

2

Document Number: 90121

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

b. Pulse width

 300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

-80

°C/W

Case-to-Sink, Flat, Greased Surface

1.0

-

Maximum Junction-to-Case (Drain)

-3.1

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

-50

-

-

V

Gate-Source Threshold Voltage

-2.0

-

-4.0

V

Gate-Source Leakage

-

-

± 500

nA

Zero Gate Voltage Drain Current

-

-

-250

μA

-

-

-1000

Drain-Source On-State Resistance

-

0.20

0.28



Forward Transconductance

2.3

3.5

-

S

Dynamic

Input Capacitance

f = 1.0 MHz, see fig. 9

-

480

-

pF

Output Capacitance

-

320

-

Reverse Transfer Capacitance

-58

-

Total Gate Charge

rating. see fig. 17

-17

26

nC

Gate-Source Charge

-4.1

6.2

Gate-Drain Charge

-5.7

8.6

Turn-On Delay Time

switching times are essentially independent

of operating temperature)

-8.2

12

ns

Rise Time

-57

86

Turn-Off Delay Time

-12

18

Fall Time

-25

38

Internal Drain Inductance

Between lead,



6 mm (0.25") from

package and center of



die contact

-4.5

-

nH

Internal Source Inductance

-7.5

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol



showing the



integral reverse



p - n junction diode

--

-9.7

A

--

-39

Body Diode Voltage

--

-6.3

V

Body Diode Reverse Recovery Time

56

110

280

ns

Body Diode Reverse Recovery Charge

0.17

0.34

0.85

μC

Forward Turn-On Time

D

S

G

S

D

G