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BC847W Fiches technique(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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BC847W Fiches technique(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 5 page Production specification NPN Silicon Epitaxial Planar Transistor BC846W/BC847W/BC848W F045 www.gmicroelec.com Rev.A 1 FEATURES For AF input stages and driver applications. High current gain. Low collector-emitter saturation voltage. Low noise between 30 Hz and 15 kHz. Complementary types:BC856W,BC857W,BC858W. APPLICATIONS General purpose switching and amplification application. SOT-323 ORDERING INFORMATION Type No. Marking Package Code BC846W 1A/1B SOT-323 BC847W 1E/1F/1G SOT-323 BC848W 1J/1K/1L SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage BC846W BC847W BC848W 80 50 30 V VCEO Collector-Emitter Voltage BC846W BC847W BC848W 65 45 30 V VEBO Emitter-Base Voltage BC846W,BC847W BC848W 6 5 V IC Collector Current -Continuous 100 mA ICM Peak Collector current 200 mA IBM Peak Base current 200 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -65 to +150 ℃ Pb Lead-free |
Numéro de pièce similaire - BC847W |
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Description similaire - BC847W |
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