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SI7123DN Fiches technique(PDF) 3 Page - Vishay Siliconix |
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SI7123DN Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 13 page Document Number: 69655 S10-0347-Rev. D, 15-Feb-10 www.vishay.com 3 Vishay Siliconix Si7123DN New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 20 40 60 80 012 34 VGS =5 V thru 2.5 V VDS - Drain-to-Source Voltage (V) VGS =2 V VGS =1 V VGS =1.5 V ID - Drain Current (A) 0.00 0.01 0.02 0.03 0.04 0 5 10 15 20 25 30 VGS = - 4.5 V VGS = - 2.5 V VGS = - 1.8 V 0.0 1.0 2.0 3.0 4.0 0 102030 405060 Qg - Total Gate Charge (nC) VDS = - 10 V, ID = - 15 A VDS = - 15 V, ID = - 16 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 0.6 1.2 1.8 2.4 3.0 0 0.3 0.6 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C TJ = - 55 °C Crss 0 1000 2000 3000 4000 5000 6000 04 8 12 16 20 VDS - Drain-to-Source Voltage (V) Ciss Coss 0.8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) VGS = - 4.5 V, I D = - 15 A |
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