SI7123DN datasheet(1/13 Pages) VISHAY

No de pièce	SI7123DN

Description	P-Channel 20 V (D-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si7123DN

New Product

Document Number: 69655

S10-0347-Rev. D, 15-Feb-10

www.vishay.com

1

P-Channel 20 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Power MOSFET: 1.8 V Rated

•

Ultra Low On-Resistance for Increased

Battery Life

•

New PowerPAK® Package

- Low Thermal Resistance, RthJC

- Low 1.07 mm Profile

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load/Power Switching in Portable Devices

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

- 20

0.0106 at VGS = - 4.5 V

- 16.0

0.0136 at VGS = - 2.5 V

- 14.1

0.0189 at VGS = - 1.8 V

- 12.0

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (

www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

1

2

3

4

5

6

7

8

S

G

D

3.30 mm

PowerPAK 1212-8

Bottom View

Ordering Information: Si7123DN-T1-E3 (Lead (Pb)-free)

Si7123DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

- 16.0

- 10.2

A

TA = 70 °C

- 12.8

- 8.2

Pulsed Drain Current

IDM

- 40

Continuous Source Current (Diode Conduction)a

IS

- 3.2

- 1.3

Maximum Power Dissipationa

TA = 25 °C

PD

3.8

1.5

W

TA = 70 °C

2.4

1.0

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)b, c

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

26

33

°C/W

Steady State

65

81

Maximum Junction-to-Case

Steady State

RthJC

1.9

2.4

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Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI9400DY	58Kb / 4P	P-Channel 20-V (D-S) MOSFET Rev. K, 02-Mar-98
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	SIA431DJ	221Kb / 9P	P-Channel 20-V (D-S) MOSFET Rev. B, 21-May-12
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	SI5457DC	244Kb / 11P	P-Channel 20 V (D-S) MOSFET Rev. A, 06-Sep-10
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