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SI7101DN Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI7101DN Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 13 page Vishay Siliconix Si7101DN New Product www.vishay.com 2 Document Number: 63232 S13-0792-Rev. A, 15-Apr-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 22 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 5.1 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.2 - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 25 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS - 10 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 15 A 0.0058 0.0072 VGS = - 4.5 V, ID = - 10 A 0.0100 0.0130 Forward Transconductancea gfs VDS = - 10 V, ID = - 15 A 44 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 3595 pF Output Capacitance Coss 442 Reverse Transfer Capacitance Crss 408 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 10 A 68 102 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A 32 48 Gate-Source Charge Qgs 9 Gate-Drain Charge Qgd 12.2 Gate Resistance Rg f = 1 MHz 0.4 1.8 3.6 Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 10 V, Rg = 1 12 24 ns Rise Time tr 10 20 Turn-Off DelayTime td(off) 38 75 Fall Time tf 816 Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 4.5 V, Rg = 1 52 100 Rise Time tr 82 150 Turn-Off DelayTime td(off) 38 75 Fall Time tf 15 30 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C - 35 A Pulse Diode Forward Current ISM - 80 Body Diode Voltage VSD IS = - 3 A, VGS = 0 V - 0.76 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 21 40 ns Body Diode Reverse Recovery Charge Qrr 10 20 nC Reverse Recovery Fall Time ta 9 ns Reverse Recovery Rise Time tb 12 |
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