Moteur de recherche de fiches techniques de composants électroniques |
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SM1G43 Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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SM1G43 Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page SM1G43,SM1J43 2001-07-10 2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Repetitive Peak Off−State Current IDRM VDRM = Rated ― ― 10 µA I T2 (+) , Gate (+) ― ― 2 II T2 (+) , Gate (−) ― ― 2 III T2 (−) , Gate (−) ― ― 2 Gate Trigger Voltage IV VGT VD = 12V, RL = 20Ω T2 (−) , Gate (+) ― 2 ― V I T2 (+) , Gate (+) ― ― 5 II T2 (+) , Gate (−) ― ― 5 III T2 (−) , Gate (−) ― ― 5 Gate Trigger Current IV IGT VD = 12V, RL = 20Ω T2 (−) , Gate (+) ― 10 ― mA Peak On−State Voltage VTM ITM = 1.5A ― ― 1.5 V Gate Non−Trigger Voltage VGD VD = Rated, Tc = 125°C 0.2 ― ― V Holding Current IH VD = 12V, ITM = 1A ― ― 10 mA Thermal Resistance Rth (j−c) Junction to Case, AC ― ― 40 °C / W Thermal Resistance Rth (j−a) Junction to Ambient, AC ― ― 180 °C / W MARKING NUMBER SYMBOL MARK SM1G43 M1G43 *1 TYPE SM1J43 M1J43 *2 Example 8A : January 1998 8B : February 1998 8L : December 1998 |
Numéro de pièce similaire - SM1G43 |
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Description similaire - SM1G43 |
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