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SI4818DY-T1 Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI4818DY-T1 Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Si4818DY Vishay Siliconix Document Number: 71122 S-31062—Rev. B, 26-May-03 www.vishay.com 1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Channel 1 0.022 @ VGS = 10 V 6.3 Channel-1 30 0.030 @ VGS = 4.5 V 5.4 Channel 2 30 0.0155 @ VGS = 10 V 9.5 Channel-2 0.0205 @ VGS = 4.5 V 8.2 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 2.0 S1 D1 G1 D2 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 G2 S2 G1 S1 D1 D2 D2 D2 N-Channel 2 MOSFET N-Channel 1 MOSFET Schottky Diode A Ordering Information: Si4818DY Si4818DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Channel-2 Parameter Symbol 10 secs Steady State 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 6.3 5.3 9.5 7.0 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 5.4 4.2 7.6 5.6 A Pulsed Drain Current IDM 30 40 A Continuous Source Current (Diode Conduction)a IS 1.3 0.9 2.2 1.15 Maximum Power Dissipationa TA = 25_C PD 1.4 1.0 2.4 1.25 W Maximum Power Dissipationa TA = 70_C PD 0.9 0.64 1.5 0.80 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Schottky Parameter Symbol Typ Max Typ Max Typ Max Unit Mi J ti t A bi ta t v 10 sec R 72 90 43 53 48 60 Maximum Junction-to-Ambienta Steady-State RthJA 100 125 82 100 80 100 _C/W Maximum Junction-to-Foot (Drain) Steady-State RthJC 51 63 25 30 28 35 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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