SI2328DS datasheet(3/4 Pages) VISHAY

No de pièce	SI2328DS

Description	N-Channel 100-V (D-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Si2328DS

Vishay Siliconix

New Product

Document Number: 71796

S-05372—Rev. A, 25-Dec-01

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

50

100

150

200

250

0

20406080

100

0.0

0.5

1.0

1.5

2.0

2.5

–50

–25

0

25

50

75

100

125

150

0

4

8

12

16

20

0123456

0.0

0.1

0.2

0.3

0.4

0.5

0.6

03

69

12

VDS – Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 10 V

ID = 1.5 A

ID – Drain Current (A)

VGS = 10 V

ID = 1.5 A

VGS = 10 V

Gate Charge

On-Resistance vs. Drain Current

Qg – Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ – Junction Temperature (_C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.0

0.1

0.2

0.3

0.4

0.5

0.6

02468

10

ID = 1.5 A

10

1

0.01

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD – Source-to-Drain Voltage (V)

VGS – Gate-to-Source Voltage (V)

0.1

TJ = 150_C

TJ = 25_C

Numéro de pièce similaire - SI2328DS

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