SS22T3G_15 datasheet(2/5 Pages) ONSEMI

No de pièce	SS22T3G

Description	Surface Mount Schottky Power Rectifier

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Fabricant	ONSEMI [ON Semiconductor]

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SS22T3G, SS24T3G, NRVBSS24T3G

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MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

SS22

SS24

VRRM

VRWM

VR

20

40

V

Average Rectified Forward Current

(At Rated VR, TL = 132°C)

IO

2.0

A

Peak Repetitive Forward Current

(At Rated VR, Square Wave,

100 kHz, TC = 127°C)

IFRM

3.0

A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

IFSM

75

A

Storage/Operating Case Temperature

Tstg, TC

−55 to +150

°C

Operating Junction Temperature (Note 1)

TJ

−55 to +150

°C

Voltage Rate of Change

(Rated VR, TJ = 25°C)

dv/dt

10,000

V/

ms

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance,

Junction−to−Lead (Note 2)

Thermal Resistance,

Junction−to−Ambient (Note 3)

RqJL

RqJA

24

80

°C/W

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 4)

see Figure 2

(iF = 2.0 A)

vF

TJ = 25°C

TJ = 125°C

V

0.50

0.46

Maximum Instantaneous Reverse Current (Note 4)

see Figure 4

(VR = 40 V)

IR

TJ = 25°C

TJ = 100°C

mA

0.4

5.7

2. Mounted with minimum recommended pad size, PC Board FR4.

3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.

4. Pulse Test: Pulse Width

≤ 250 ms, Duty Cycle ≤ 2.0%.

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