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FDD068AN03L Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FDD068AN03L Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 11 page ©2003 Fairchild Semiconductor Corporation December 2003 FDD068AN03L / FDU068AN03L Rev. B1 FDD068AN03L / FDU068AN03L N-Channel PowerTrench® MOSFET 30V, 35A, 6.8m Ω Features •rDS(ON) = 5.7mΩ (Typ.), VGS = 4.5V, ID = 35A •Qg(5) = 24nC (Typ.), VGS = 5V • Low Miller Charge •Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • 12V Automotive Load Control • Starter / Alternator Systems • Electronic Power Steering Systems •ABS • DC-DC Converters MOSFET Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Current 35 A Continuous (TC < 154 oC, V GS = 10V) Continuous (TC < 150 oC, V GS = 4.5V) 35 A Continuous (Tamb = 25 oC, V GS = 10V, with R θJA = 52 oC/W) 17 A Pulsed Figure 4 A EAS Single Pulse Avalanche Energy (Note 1) 168 mJ PD Power dissipation 80 W Derate above 25oC0.53 W/oC TJ, TSTG Operating and Storage Temperature -55 to 175 oC RθJC Thermal Resistance Junction to Case TO-252, TO-251 1.88 oC/W RθJA Thermal Resistance Junction to Ambient TO-252, TO-251 100 oC/W RθJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 52 oC/W D G S G DS I-PAK (TO-251AA) G S D TO-252 D-PAK (TO-252) |
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Description similaire - FDD068AN03L |
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