1

Publication Order Number :

2SB1216_2SD1816/D

www.onsemi.com

©

Semiconductor Components Industries, LLC, 2016

March 2016 - Rev. 2

2SB1216, 2SD1816

Bipolar Transistor

(

−)100V, (−)4A, Low VCE(sat),

(PNP)NPN Single

Features

• Low Collector to Emitter Saturation Voltage

• Small and Slim Package Facilitating Compactness of Sets

• High fT

• Good Linearity of hFE

• Fast Switching Time

Typical Applications

• Suitable for Relay Drivers

• High Speed Inverters

• Converters

• Other General High Current Switching Applications

SPECIFICATIONS

( ) : 2SB1216

ABSOLUTE MAXIMUM RATING

at Ta = 25

Parameter

Symbol

Value

Unit

Collector to Base Voltage

VCBO

(

−) 120

V

Collector to Emitter Voltage

VCEO

(

−) 100

V

Emitter to Base Voltage

VEBO

(

−) 6

V

Collector Current

IC

(

−) 4

A

Collector Current (Pulse)

ICP

(

−) 8

A

Collector Dissipation

PC

1W

Tc=25

°C

20

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

ELECTRICAL CONNECTION

MARKING

ORDERING INFORMATION

See detailed ordering and shipping

information on page 7 of this data sheet.

2,4

3

1

2SD1816

2,4

3

1

2SB1216

1: Base

2 : Collector

3: Emitter

4 : Collector

B1216

D1816

LOT No.

RANK

LOT No.

RANK

IPAK / TP

1

2

3

4

DPAK / TP-FA

4

1

2

3