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IRF7314 Fiches technique(PDF) 2 Page - International Rectifier |
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IRF7314 Fiches technique(HTML) 2 Page - International Rectifier |
2 / 7 page IRF7314 Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– -0.78 -1.0 V TJ = 25°C, IS = -2.9A, VGS = 0V trr Reverse Recovery Time ––– 47 71 ns TJ = 25°C, IF = -2.9A Qrr Reverse RecoveryCharge ––– 49 73 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics ––– ––– ––– ––– -21 -2.5 A
Surface mounted on FR-4 board, t ≤ 10sec. Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ -2.9A, di/dt ≤ -77A/µs, V DD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting T J = 25°C, L = 35mH RG = 25Ω, IAS = -2.9A. Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.031 ––– V/°C Reference to 25°C, ID = -1mA ––– 0.049 0.058 VGS = -4.5V, ID = -2.9A ––– 0.082 0.098 VGS = -2.7V, ID = -1.5A VGS(th) Gate Threshold Voltage -0.70 ––– ––– V VDS = VGS, ID = -250µA gfs Forward Transconductance ––– 5.9 ––– S VDS = -10V, ID = -1.5A ––– ––– -1.0 VDS = -16V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 55°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = 12V Qg Total Gate Charge ––– 19 29 ID = -2.9A Qgs Gate-to-Source Charge ––– 4.0 6.1 nC VDS = -16V Qgd Gate-to-Drain ("Miller") Charge ––– 7.7 12 VGS = -4.5V, See Fig. 10 td(on) Turn-On Delay Time ––– 15 22 VDD = -10V tr Rise Time ––– 40 60 ID = -2.9A td(off) Turn-Off Delay Time ––– 42 63 RG = 6.0Ω tf Fall Time ––– 49 73 RD = 3.4Ω Ciss Input Capacitance ––– 780 ––– VGS = 0V Coss Output Capacitance ––– 470 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 240 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns S D G |
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