2N4918_17 datasheet(4/6 Pages) ONSEMI

No de pièce	2N4918

Description	Medium-Power Plastic PNP Silicon Transistors

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2N4918 − 2N4920 Series

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Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

0.05

0.1

0.2 0.3

0.5

1.0

2.0 3.0

5.0

10

20

30

50

100

200 300

1000

500

qJC(t) = r(t) qJC

qJC = 4.16°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.01

SINGLE PULSE

0.1

10

1.0

Figure 5. Active−Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.5

0.1

2.0

3.0

5.0

10

20

30

50

100

70

0.2

TJ = 150°C

dc

5.0 ms

100

ms

7.0

PULSE CURVES APPLY BELOW

RATED VCEO

1.0 ms

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMIT @ TC = 25°C

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

operation i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

5.0

10

Figure 6. Storage Time

IC, COLLECTOR CURRENT (mA)

2.0

1.0

0.5

0.3

0.2

0.1

0.05

20

30

50

70

500 700 1000

ts′ = ts - 1/8 tf

0.07

100

3.0

0.7

200 300

TJ = 25°C

TJ = 150°C

IC/IB = 20

5.0

10

Figure 7. Fall Time

IC, COLLECTOR CURRENT (mA)

2.0

1.0

0.5

0.3

0.2

0.1

0.05

20

30

50

70

500 700 1000

0.07

100

3.0

0.7

200 300

TJ = 25°C

TJ = 150°C

IC/IB = 10

IC/IB = 20

IC/IB = 10

IB1 = IB2

VCC = 30 V

IB1 = IB2

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