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S-1002CB50I-M5T1U Fiches technique(PDF) 10 Page - Seiko Instruments Inc

No de pièce S-1002CB50I-M5T1U
Description  VOLTAGE DETECTOR WITH SENSE PIN
Download  39 Pages
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Fabricant  SII [Seiko Instruments Inc]
Site Internet  http://www.sii.co.jp
Logo SII - Seiko Instruments Inc

S-1002CB50I-M5T1U Fiches technique(HTML) 10 Page - Seiko Instruments Inc

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VOLTAGE DETECTOR WITH SENSE PIN
S-1002 Series
Rev.1.1_02
10
Electrical Characteristics
1. Nch open-drain output product
Table 11
(Ta =
+25°C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Circuit
Detection voltage
*1 −VDET
0.95 V
≤ VDD ≤ 10.0 V
1.0 V
≤ −VDET(S) < 2.2 V
−VDET(S)
− 0.022
−VDET(S)
−VDET(S)
+ 0.022
V
1
2.2 V
≤ −VDET(S) ≤ 5.0 V
−VDET(S)
× 0.99
−VDET(S)
−VDET(S)
× 1.01
V
1
Hysteresis width
VHYS
−VDET
× 0.03
−VDET
× 0.05
−VDET
× 0.07
V
1
Current
consumption
*2
ISS
VDD = 10.0 V, VSENSE =
−VDET(S) + 1.0 V
0.50
0.90
μA
2
Operation voltage VDD
0.95
10.0
V
1
Output current
IOUT
Output transistor
Nch
VDS
*3 = 0.5 V
VSENSE = 0.0 V
VDD = 0.95 V
0.59
1.00
mA
3
VDD = 1.2 V
0.73
1.33
mA
3
VDD = 2.4 V
1.47
2.39
mA
3
VDD = 4.8 V
1.86
2.50
mA
3
Leakage current
ILEAK
Output transistor
Nch
VDD = 10.0 V, VDS
*3 = 10.0 V, VSENSE = 10.0 V
0.08
μA
3
Detection voltage
temperature
coefficient
*4
Δ−VDET
ΔTa • −VDET Ta = −40°C to +85°C
±100
±350 ppm/°C
1
Detection
delay time
*5
tDET
VDD = 5.0 V
40
μs
4
Release
delay time
*6
tRESET
VDD = 5.0 V
−VDET(S) ≤ 2.4 V
40
μs
4
2.4 V
< −VDET(S)
80
μs
4
SENSE pin
resistance
RSENSE
1.0 V
≤ −VDET(S) < 1.2 V
5.0
19.0
42.0
M
Ω
2
1.2 V
≤ −VDET(S) ≤ 5.0 V
6.0
30.0
98.0
M
Ω
2
*1.
−VDET: Actual detection voltage value, −VDET(S): Set detection voltage value (the center value of the detection voltage
range in Table 3 or Table 4)
*2.
The current flowing through the SENSE pin resistance is not included.
*3.
VDS: Drain-to-source voltage of the output transistor
*4.
The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Δ−VDET
ΔTa
[]
mV/°C
*1 = −VDET(S) (typ.)[]
V
*2 ×
Δ−VDET
ΔTa • −VDET []
ppm/°C
*3 ÷ 1000
*1. Temperature change of the detection voltage
*2. Set detection voltage
*3. Detection voltage temperature coefficient
*5.
The time period from when the pulse voltage of 6.0 V
→ −VDET(S) − 2.0 V or 0 V is applied to the SENSE pin to when
VOUT reaches VDD / 2, after the output pin is pulled up to 5.0 V by the resistance of 470 k
Ω.
*6.
The time period from when the pulse voltage of 0 V
→ −VDET(S) + 2.0 V or 6.0 V is applied to the SENSE pin to when
VOUT reaches VDD / 2, after the output pin is pulled up to 5.0 V by the resistance of 470 k
Ω.


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