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KM6164000BLT-7L Fiches technique(PDF) 3 Page - Samsung semiconductor |
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KM6164000BLT-7L Fiches technique(HTML) 3 Page - Samsung semiconductor |
3 / 9 page KM6164000B Family CMOS SRAM Revision 4.01 June 1998 3 PRODUCT LIST Commercial Temperature Product(0~70 °C) Industrial Temperature Products(-40~85 °C) Part Name Function Part Name Function KM6164000BLT-5L KM6164000BLT-7L KM6164000BLR-5L KM6164000BLR-7L 44-TSOP2-F, 55ns, LL-pwr 44-TSOP2-F, 70ns, LL-pwr 44-TSOP2-R, 55ns, LL-pwr 44-TSOP2-R, 70ns, LL-pwr KM6164000BLTI-7L KM6164000BLTI-10L KM6164000BLRI-7L KM6164000BLRI-10L 44-TSOP2-F, 70ns, LL-pwr 44-TSOP2-F, 100ns, LL-pwr 44-TSOP2-R, 70ns, .LL-pwr 44-TSOP2-R, 100ns, LL-pwr ABSOLUTE MAXIMUM RATINGS1) 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Item Symbol Ratings Unit Remark Voltage on any pin relative to Vss VIN,VOUT -0.5 to 7.0 V - Voltage on Vcc supply relative to Vss VCC -0.5 to7.0 V - Power Dissipation PD 1.0 W - Storage temperature TSTG -65 to 150 °C - Operating Temperature TA 0 to 70 °C KM6164000BL-L -40 to 85 °C KM6164000BLI-L Soldering temperature and time TSOLDER 260 °C, 10sec(Lead Only) - - FUNCTIONAL DESCRIPTION 1. X means don ′t care. (Must be in low or high state) CS OE WE LB UB I/O1~8 I/O9~16 Mode Power H X1) X1) X1) X1) High-Z High-Z Deselected Standby L H H X1) X1) High-Z High-Z Output Disabled Active L X1) X1) H H High-Z High-Z Output Disabled Active L L H L H Dout High-Z Lower Byte Read Active L L H H L High-Z Dout Upper Byte Read Active L L H L L Dout Dout Word Read Active L X1) L L H Din High-Z Lower Byte Write Active L X1) L H L High-Z Din Upper Byte Write Active L X1) L L L Din Din Word Write Active |
Numéro de pièce similaire - KM6164000BLT-7L |
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Description similaire - KM6164000BLT-7L |
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