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LM387AN Fiches technique(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No de pièce LM387AN
Description  LM387/LM387A Low Noise Dual Preamplifier
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Fabricant  NSC [National Semiconductor (TI)]
Site Internet  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM387AN Fiches technique(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Supply Voltage
LM387
a
30V
LM387A
a
40V
Power Dissipation (Note 1)
15W
Operating Temperature Range
0 Cto a70 C
Storage Temperature Range
b
65 Cto a150 C
Lead Temperature (Soldering 10 sec)
260 C
Electrical Characteristics TA e 25 C VCC e 14V unless otherwise stated
Parameter
Conditions
Min
Typ
Max
Units
Voltage Gain
Open Loop f e 100 Hz
160000
VV
Supply Current
LM387 VCC 9V–30V RL e %
10
mA
LM387A VCC 9V–40V RL e %
10
mA
Input Resistance
Positive Input
50
100
kX
Negative Input
200
kX
Input Current
05
31
m
A
Negative Input
Output Resistance
Open Loop
150
X
Output Current
Source
8
mA
Sink
2
mA
Output Voltage Swing
Peak-to-Peak
VCCb2V
Unity Gain Bandwidth
15
MHz
Large Signal Frequency
20 Vp-p (VCC l 24V)
75
kHz
Response
THD s 1%
Maximum Input Voltage
Linear Operation
300
mVrms
Supply Rejection Ratio
f e 1 kHz
110
dB
Input Referred
Channel Separation
f e 1 kHz
40
60
dB
Total Harmonic Distortion
60 dB Gain f e 1 kHz
01
05
%
Total Equivalent Input
10 Hz – 10000 Hz
10
12
m
Vrms
Noise (Flat Gain Cricuit)
LM387
Figure 1
Output Noise NAB Tape
Unweighted
400
700
m
Vrms
Playback Circuit Gain of 37 dB
LM387A
Figure 2
Note 1
For operation in ambient temperatures above 25 C the device must be derated based on a 150 C maximum junction temperature and a thermal resistance
of 80 CW junction to ambient
Typical Applications (Continued)
Two-Pole Fast Turn-ON NAB Tape Preamplifier
TLH7845 – 5
Frequency Response of NAB
Circuit of Figure 2
TLH7845 – 6
2


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