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FDC6420 Fiches technique(PDF) 7 Page - Fairchild Semiconductor |
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FDC6420 Fiches technique(HTML) 7 Page - Fairchild Semiconductor |
7 / 8 page FDC6420C Rev C(W) Typical Characteristics 0 1 2 3 4 5 0 1 2 3 4 5 Qg, GATE CHARGE (nC) I D = -2.2A VDS =- 5V -15V -10V 0 100 200 300 400 500 600 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics. 0.01 0.1 1 10 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms R DS(ON) LIMIT VGS = -4.5V SINGLE PULSE RθJA = 180 oC/W TA = 25 oC 10ms 0 1 2 3 4 5 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 180°C/W TA = 25°C Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) * RθJA RθJA = 180°C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. |
Numéro de pièce similaire - FDC6420 |
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Description similaire - FDC6420 |
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