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74AHC3GU04 Fiches technique(PDF) 4 Page - NXP Semiconductors

No de pièce 74AHC3GU04
Description  high-speed Si-gate CMOS device
Download  17 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74AHC3GU04 Fiches technique(HTML) 4 Page - NXP Semiconductors

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© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 5 March 2004
4 of 17
Philips Semiconductors
74AHC3GU04
Inverter
9.
Limiting values
[1]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
10. Recommended operating conditions
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground=0V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
−0.5
+7.0
V
VI
supply voltage
−0.5
+7.0
V
IIK
input diode current
VI < −0.5 V
-
−20
mA
IOK
output diode current
VO < −0.5 V or VO >VCC + 0.5 V
[1] -
±20
mA
IO
output source or sink
current
VΟ >−0.5 V or VO <VCC + 0.5 V
-
±25
mA
ICC, IGND
VCC or GND current
-
±75
mA
Tstg
storage temperature
−65
+150
°C
Ptot
power dissipation
Tamb = −40 °C to +125 °C
-
250
mW
Table 7:
Recommended operating operations
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCC
supply voltage
2.0
5.0
5.5
V
VI
input voltage
0
-
5.5
V
VO
output voltage
0
-
VCC
V
Tamb
operating ambient
temperature
see Section 11 and
Section 12
−40
+25
+125
°C
tr,tr
input rise and fall
times
VCC = 3.3 V ± 0.3 V
-
-
100
ns/V
VCC =5V ± 0.5 V
-
-
20
ns/V


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