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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2SD1183 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1183 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD1183 DESCRIPTION · High Breakdown Voltage- : VCBO= 1200V (Min) · High Reliability · Wide area of safe operation · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3 A ICP Collector Current-Peak 5 A PC Collector Power Dissipation @ TC TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Numéro de pièce similaire - 2SD1183 |
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Description similaire - 2SD1183 |
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