If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales Office

Distributors for availability and specifications

LM3045

LM3046LM3086

Each

Total

Each

Total

Units

Transistor

Package

Transistor

Package

Power Dissipation

300

750

300

750

mW

300

750

mW

Derate at 667

mW C

300

750

mW

Derate at 8

mW C

15

15

V

20

20

V

20

20

V

55

V

50

50

mA

Operating Temperature Range

b

b

Storage Temperature Range

b

b

Soldering Information

Dual-In-Line Package Soldering (10 Sec)

260 C

260 C

Small Outline Package

Vapor Phase (60 Seconds)

215 C

Infrared (15 Seconds)

220 C

See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount

devices

Limits

Limits

Parameter

Conditions

LM3045 LM3046

LM3086

Units

Min

Typ

Max

Min

Typ

Max

2060

2060

V

1524

1524

V

Collector to Substrate Breakdown

20

60

20

60

V

7

5

7

V

0002

40

0002

100

nA

05

5

m

A

Static Forward Current Transfer

100

100

40

100

40

100

54

54

Input Offset Current for Matched

03

2

m

A

0715

0715

V

0800

0800

Magnitude of Input Offset Voltage for

045

5

mV

Differential Pair

Magnitude of Input Offset Voltage for Isolated

Transistors

045

5

mV

Temperature Coefficient of Base to

Emitter Voltage

D

T

J

b

19

b

19

mV C

023

023

V

Temperature Coefficient of

Input Offset Voltage

D

T

J

11

m

V C

Note 1

The collector of each transistor of the LM3045 LM3046 and LM3086 is isolated from the substrate by an integral diode The substrate (terminal 13) must

be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action

2