MC74VHCT139A

http://onsemi.com

3

MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Positive DC Supply Voltage

−0.5 to +7.0

V

Digital Input Voltage

−0.5 to +7.0

V

DC Output Voltage

Output in 3−State

High or Low State

−0.5 to +7.0

V

Input Diode Current

−20

mA

Output Diode Current

$20

mA

DC Output Current, per Pin

$25

mA

$75

mA

Power Dissipation in Still Air

SOIC

TSSOP

200

180

mW

Storage Temperature Range

−65 to +150

°C

ESD Withstand Voltage

Human Body Model (Note 1)

Machine Model (Note 2)

Charged Device Model (Note 3)

>2000

>200

>2000

V

Latchup Performance

$300

mA

Thermal Resistance, Junction−to−Ambient

SOIC

TSSOP

143

164

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Tested to EIA/JESD22−A114−A

2. Tested to EIA/JESD22−A115−A

3. Tested to JESD22−C101−A

4. Tested to EIA/JESD78

RECOMMENDED OPERATING CONDITIONS

Symbol

Characteristics

Min

Max

Unit

DC Supply Voltage

4.5

5.5

V

DC Input Voltage

0

5.5

V

DC Output Voltage Output in 3−State

High or Low State

0

0

5.5

V

Operating Temperature Range, all Package Types

−55

125

°C

Input Rise or Fall Time

0

20

ns/V

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.

DEVICE JUNCTION TEMPERATURE VERSUS TIME

TO 0.1% BOND FAILURES

Junction

Temperature

°C

Time, Hours

Time, Years

80

1,032,200

117.8

90

419,300

47.9

100

178,700

20.4

110

79,600

9.4

120

37,000

4.2

130

17,800

2.0

140

8,900

1.0

1

1

10

100

1000

TIME, YEARS

FAILURE RATE OF PLASTIC = CERAMIC

UNTIL INTERMETALLICS OCCUR

Figure 6. Failure Rate vs. Time Junction Temperature