BC847PN datasheet(2/6 Pages) JIANGSU

No de pièce	BC847PN

Description	DUAL TRANSISTOR (NPNPNP)

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Fabricant	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Site Internet	http://www.cj-elec.com/en/

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MAXIMUM RATINGS TR2 (Ta=25

℃ unless otherwise noted)

CHARACTERISTICS of TR2 (PNP Transistor) (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-10μA,IE=0

-50

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA,IB=0

-45

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-1μA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-30V,IE=0

-15

nA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-15

nA

DC current gain

hFE1

VCE=-5V,IC=-2mA

220

475

VCE(sat)

IC=-10mA,IB=-0.5mA

-0.3

V

Collector-emitter saturation voltage

VCE(sat)

IC=-100mA,IB=-5mA

-0.65

V

VBE(sat)

IC=-10mA,IB=-0.5mA

-0.7

V

Base-emitter saturation voltage

VBE(sat)

IC=-100mA,IB=-5mA

-0.95

V

VBE(on)

VCE=-5V,IC=-2mA

-0.6

-0.75

V

Base-emitter voltage

VBE(on)

VCE=-5V,IC=-10mA

-0.82

V

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

4.5

pF

Transition frequency

fT

VCE=-5V,IC=-10mA,f=100MHz

100

MHz

Noise figure

NF

VCE=-5V,Ic=-0.2mA,

f=

1kHz,Rg=2KΩ, ∆f=200Hz

10

dB

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-45

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current –Continuous

-0.1

A

PC*

Collector Power Dissipation

200

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

www.cj-elec.com

2

A,Jun,2014

www.cj-elec.com

E,Mar,2016

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