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STB5N80K5 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STB5N80K5 Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 15 page May 2016 DocID028512 Rev 2 1/15 This is information on a product in full production. www.st.com STB5N80K5 N- channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5 Power MOSFET in a D²PAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STB5N80K5 800 V 1.75 Ω 4 A Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STB5N80K5 5N80K5 D²PAK Tape and reel 1 3 TAB D²PAK 2 |
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