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2SK2628LS Fiches technique(PDF) 1 Page - Sanyo Semicon Device |
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2SK2628LS Fiches technique(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page 2SK2628LS No.7082-1/4 Features • Low ON-resistance. • Low Qg. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) ID 6A Drain Current (Pulse) IDP 24 A Allowable Power Dissipation PD 2.0 W Tc=25 °C 35 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 600 V Zero-Gate Voltage Drain Current IDSS VDS=600V, VGS=0 1.0 mA Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0 ±100 nA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 5.5 V Forward Transfer Admittance yfs VDS=10V, ID=4A 2.0 4.0 S Static Drain-to-Source On-State Resistance RDS(on) ID=2A, VGS=15V 0.9 1.1 Ω Marking : K2628 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN7082 2SK2628LS Package Dimensions unit : mm 2078C [2SK2628LS] O2501 TS IM TA-3474 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) 0.7 2.55 2.55 1.2 0.9 0.75 1.2 4.5 2.8 12 3 10.0 3.2 Preliminary |
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