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LM2685 Fiches technique(PDF) 7 Page - National Semiconductor (TI) |
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LM2685 Fiches technique(HTML) 7 Page - National Semiconductor (TI) |
7 / 9 page Detailed Device Description (Continued) is added is determined by the parasitic resistance (R ds(on) of the MOSFET switches and the ESR of the capacitors) and the charge transfer loss between capacitors. Shutdown and Load Disconnect In addition to the nominal charge pump and regulator func- tions, the LM2685 features shutdown and load disconnect circuitry. CE (chip enable) and SDP (shutdown positive) per- form the same task with opposite input polarities. When CE is low or SDP is high, all circuit blocks are disabled and V 05 falls to ground potential. This is the same result as when the die temperature exceeds 150˚C (typical), and the device’s internal thermal shutdown is triggered. Forcing SDN (shutdown negative) high disables only the in- verting charge pump. The doubling charge pump and the LDO regulator continue to operate, so the V 05 and the VPSW remain at 5V. The LM2685 incorporates two low impedance switches tied to the V 05 and VNEG outputs, because some special applica- tions require load disconnect and this is achievable via the switches. Switch PSW connects V 05 to VPSW, and switch NSW connects V NEG to VNSW. In normal operation, these switches are closed, allowing 5V loads to be tied to either V 05 or VPSW and −5V loads to be tied to either VNEG or V NSW. Driving SDN high opens switch NSW only, while forc- ing CE low or SDP high, opens both the PSW and NSW. Application Information Capacitor Selection The output resistance and ripple voltage are dependent on the capacitance and ESR values of the external capacitors. Voltage Doubler External Capacitors The selection of capacitors are based on the specifications of the dropout voltage (which equals I OUT ROUT), the output voltage ripple, and the converter efficiency. where R SW is the sum of the ON resistance of the internal MOSFET switches as shown in Figure 2. The peak-to-peak output voltage ripple is determined by the oscillator frequency, the capacitance and ESR of the capaci- tor C3. High capacitance (2.2µF to higher), low ESR capacitors can reduce the output resistance and the voltage ripple. where I Q(V+) is the quiescent power loss of the IC device, and I 2 LR is the conversion loss associated with the switch on-resistance, the two external capacitors and their ESRs. Low ESR capacitors (table to be referenced) are recom- mended to maximize efficiency, reduce the output voltage drop and voltage ripple. +5 LDO Regulator External Capacitors The voltage doubler output capacitor, C3, serves as the input capacitor of the +5 LDO regulator. The output capacitor C4, must meet the requirement for minimum amount of capaci- tance and appropriate ESR (Equivalent Serving Resistance) for proper operation. The ESR value must remain within the regions of stability as shown in Figure 4, Figure 5 and Figure 6 to ensure output’s stability. A minimum capacitance of 1µF is required at the output. This can be increased without limit, but a 4.7µF tantalum capacitor is recommended for loads ranging upto the maximum specification. With lighter loads of less or equal to 10mA, ceramic capacitor of at least 1µF and ESR in the milliohms can be used. This has to be con- nected to V PSW pin instead of the V05 pin. Any output capacitor used should have a good tolerance over temperature for capacitance and ESR values. The larger the capacitor, with ESR within the stable region, the better the stability and noise performance. DS101100-5 FIGURE 3. Voltage Inverter Principle DS101100-25 FIGURE 4. ESR Curve for C OUT = 2.2µF www.national.com 7 |
Numéro de pièce similaire - LM2685 |
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Description similaire - LM2685 |
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