IRFB38N20DPbF

IRFS38N20DPbF

IRFSL38N20DPbF

200

V

260

V

54

m



175

°C

Key Parameters

1

2016-5-31

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

43*

A

30*

Pulsed Drain Current 

180

Maximum Power Dissipation 

3.8

W

Maximum Power Dissipation 

300*

W

Linear Derating Factor

2.0*

W/°C

Gate-to-Source Voltage

± 30

V

dv/dt

Peak Diode Recovery dv/dt

9.5

V/ns

Operating Junction and

-55 to + 175

 

Storage Temperature Range

°C 

Soldering Temperature, for 10 seconds (1.6mm from case)

300

 

Mounting torque, 6-32 or M3 screw

 

10 lbf•in (1.1N•m)

 

Thermal Resistance  

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.47*

°C/W

Junction-to-Ambient ( PCB Mount, steady state) 

–––

40

Case-to-Sink, Flat, Greased Surface

0.50

–––

Junction-to-Ambient 

–––

62

D2 Pak

IRFS38N20DPbF

G

D

S

Gate

Drain

Source

Applications

 High frequency DC-DC converters

 Plasma Display Panel

S

D

G

S

D

G

D

TO-262 Pak

IRFSL38N20DPbF

S

D

G

D

TO-220AB

IRFB38N20DPbF

Base part number

Package Type

Standard Pack

Form

Quantity

IRFB38N20DPbF

TO-220

Tube

50

IRFB38N20DPbF

IRFSL38N20DPbF

TO-262

Tube

50

IRFSL38N20DPbF

IRFS38N20DPbF

D2-Pak

Tube

50

IRFS38N20DPbF

Tape and Reel Left

800

IRFS38N20DTRLPbF

Orderable Part Number

Benefits

 Low Gate-to-Drain Charge to Reduce Switching Losses

to Simplify

Design, (See App. Note AN1001)

 Fully Characterized Avalanche Voltage and Current

 Lead-Free

cycles from -55 to 150°C and is accounted for by the physical wear out of the die attach medium.

Notes  through  are on page 2.