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FDC6333C Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDC6333C Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDC6333C Rev C (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = –250 µA Q1 Q2 30 –30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA,Ref. to 25°C ID = –250 µA,Ref. to 25°C Q1 Q2 27 –22 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V VDS = –24 V, VGS = 0 V Q1 Q2 1 –1 µA IGSSF Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V VGS = 25 V, VDS = 0 V Q1 Q2 100 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V VGS = –25 V, VDS = 0 V Q1 Q2 –100 –100 nA On Characteristics (Note 2) VGS(th) Q1 VDS = VGS, ID = 250 µA 1 1.8 3 Gate Threshold Voltage Q2 VDS = VGS, ID = –250 µA –1 –1.8 –3 V ∆VGS(th) Q1 ID = 250 µA,Ref. To 25°C 4 ∆T J Gate Threshold Voltage Temperature Coefficient Q2 ID = –250 µA,Ref. to 25°C –4 mV/ °C RDS(on) Q1 VGS = 10 V, ID = 2.5 A VGS = 4.5 V, ID = 2.0 A VGS = 10 V, ID = 2.5 A,TJ=125 °C 73 90 106 95 150 148 Static Drain–Source On–Resistance Q2 VGS = –10 V, ID = –2.0 A VGS =– 4.5 V, ID = –1.7 A VGS = 10 V, ID= –2.0 A,TJ=125 °C 95 142 149 130 220 216 m Ω ID(on) Q1 VGS = 10 V, VDS = 5 V 8 On–State Drain Current Q2 VGS = –10 V, VDS = –5 V –8 A gFS Q1 VDS = 5 V ID = 2.5 A 7 Forward Transconductance Q2 VDS = –5 V ID = –2.0A 3 S Dynamic Characteristics Ciss Q1 VDS=15 V, V GS= 0 V, f=1.0MHz 282 Input Capacitance Q2 VDS=–15 V, V GS= 0 V, f=1.0MHz 185 pF Coss Q1 VDS=15 V, V GS= 0 V, f=1.0MHz 49 Output Capacitance Q2 VDS=–15 V, V GS= 0 V, f=1.0MHz 56 pF Crss Q1 VDS=15 V, V GS= 0 V, f=1.0MHz 20 Reverse Transfer Capacitance Q2 VDS=–15 V, V GS= 0 V, f=1.0MHz 26 pF Switching Characteristics (Note 2) td(on) Q1 4.5 9 Turn–On Delay Time Q2 4.5 9 ns tr Q1 6 12 Turn–On Rise Time Q2 13 23 ns td(off) Q1 19 34 Turn–Off Delay Time Q2 11 20 ns tf Q1 1.5 3 Turn–Off Fall Time Q2 For Q1: VDS =15 V, I DS= 1 A VGS= 10 V, RGEN = 6 Ω For Q2: VDS =–15 V, I DS= –1 A VGS= –10 V, RGEN = 6 Ω 2 4 ns Qg Q1 4.7 6.6 Total Gate Charge Q2 4.1 5.7 nC Qgs Q1 0.9 Gate–Source Charge Q2 0.8 nC Qgd Q1 0.6 Gate–Drain Charge Q2 For Q1: VDS =15 V, I DS= 2.5 A VGS= 10 V, RGEN = 6 Ω For Q2: VDS =–15 V, I DS= –2.0 A VGS= –10 V, 0.4 nC |
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