SI4650DY datasheet(1/12 Pages) VISHAY

No de pièce	SI4650DY

Description	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Vishay Siliconix

Si4650DY

Document Number: 70449

S10-0105-Rev. D, 18-Jan-10

www.vishay.com

1

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Notebook Logic dc-to-dc

•

Low Current dc-to-dc

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a, e

Qg (Typ.)

Channel-1

30

0.018 at VGS = 10 V

8.0

10.5

0.022 at VGS = 4.5 V

8.0

Channel-2

30

0.018 at VGS = 10 V

8.0

10.5

0.022 at VGS = 4.5 V

8.0

SCHOTTKY PRODUCT SUMMARY

VDS (V)

VSD (V)

Diode Forward Voltage

IF (A)

a

30

0.43 V at 1.0 A

2.8

D1

G1

D1

S2

G2

SO-8

5

6

7

8

Top View

2

3

4

1

S1/D2

Ordering Information: Si4650DY-T1-E3 (Lead (Pb)-free)

Si4650DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

D1

G1

S1

N-Channel MOSFET

D2

G2

S2

Schottky Diode

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 110 °C/W (Channel-1) and 110 °C/W (Channel-2).

e. Package limited.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Channel-1

Channel-2

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

8.0e

A

TC = 70 °C

7.8

TA = 25 °C

7.8b, c

TA = 70 °C

6.2b, c

Pulsed Drain Current (10 µs Pulse Width)

IDM

30

Source-Drain Current Diode Current

TC = 25 °C

IS

2.8

TA = 25 °C

1.8b, c

Pulsed Source-Drain Current

ISM

30

Single Pulse Avalanche Current

L = 0.1 mH

IAS

20

Single Pulse Avalanche Energy

EAS

20

mJ

Maximum Power Dissipation

TC = 25 °C

PD

3.1

W

TC = 70 °C

22

TA = 25 °C

2b, c

TA = 70 °C

1.2b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Channel-1

Channel-2

Unit

Typ.

Max.

Typ.

Max.

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

52

62.5

52

62.5

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

35

40

35

40

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