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SI4922BDY Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI4922BDY Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix Si4922BDY Document Number: 74459 S09-0704-Rev. B, 27-Apr-09 www.vishay.com 1 Dual N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition •TrenchFET® Power MOSFET • 100 % Rg and UIS tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a, e Qg (Typ.) 30 0.016 at VGS = 10 V 8 19 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 °C/W. e. Package Limited. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 8e A TC = 70 °C 8e TA = 25 °C 8b, c, e TA = 70 °C 6.6b, c Pulsed Drain Current (10 µs Pulse Width) IDM 35 Source-Drain Current Diode Current TC = 25 °C IS 2.5 TA = 25 °C 1.7b, c Pulsed Sorce-Drain Current ISM 35 Single Pulse Avalanche Current L = 0.1 mH IAS 15 Single-Pulse Avalanche Energy EAS 11.2 mJ Maximum Power Dissipation TC = 25 °C PD 3.1 W TC = 70 °C 2 TA = 25 °C 2b, c TA = 70 °C 1.28b, c Operating Junction and Storage Temperature Range TJ, Tstg - 50 to 150 °C D1 G1 S1 N-Channel MOSFET D2 G2 S2 N-Channel MOSFET S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4922BDY -T1-E3 (Lead (Pb)-free) Si4922BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) THERMAL RESISTANCE RATINGS Limit Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 50 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40 |
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