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SI3993CDV Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI3993CDV Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 11 page Vishay Siliconix Si3993CDV New Product Document Number: 67331 S11-0240-Rev. A, 14-Feb-11 www.vishay.com 1 Dual P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) a Qg (Typ.) - 30 0.111 at VGS = - 10 V - 2.9 2.7 nC 0.188 at VGS = - 4.5 V - 2.2 Ordering Information: Si3993CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) TSOP-6 Top View 6 4 1 2 3 5 2.85 mm 3 mm D2 G2 S1 S2 D1 G1 Marking Code MJ XXX Lot Traceability and Date Code Part # Code S2 G2 D2 P-Channel MOSFET S1 G1 D1 P-Channel MOSFET Notes: a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 150 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 2.9 A TC = 70 °C - 2.3 TA = 25 °C - 2.6b, c TA = 70 °C - 2.1b, c Pulsed Drain Current IDM - 8 Continuous Source-Drain Diode Current TC = 25 °C IS - 1.17 TA = 25 °C - 0.95b, c Maximum Power Dissipation TC = 25 °C PD 1.4 W TC = 70 °C 0.9 TA = 25 °C 1.14b, c TA = 70 °C 0.73b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t 5 s RthJA 93 110 °C/W Maximum Junction-to-Foot Steady State RthJF 75 90 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications • Battery Switch for Portable Devices • Computers - Bus Switch - Load Switch |
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