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DCR1003SN1313 Datasheet(Fiches technique) 1 Page - American Microsemiconductor

Numéro de pièce DCR1003SN1313
Description  High Power Button Capsule Thyristor
Télécharger  4 Pages
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Fabricant  AMMSEMI [American Microsemiconductor]
Site Internet  http://www.americanmicrosemi.com/
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Tel.1-973-377-9566Fax.1-973-377-3078
133KingsRoad
Madison,NewJersey07940
UnitedStatesofAmerica
www.americanmicrosemi.com
DEKRACertificationInc.
AS9100CandISO9001:2008
CertificateNo.131519.01
©2016AmericanMicrosemiconductor,Inc.
Specificationsaresubjecttochangewithoutnotice
DocumentPage1of4
Revised05/2016
HighPower
ButtonCapsule
Thyristor
DCR1003Series
DCR1004Series
IT(AV)=1540A
VRRM=1700V
CURRENTRATINGS―DOUBLESIDECOOLED
IT(AV)
Meanon-statecurrent
HalfwaveresistiveloadTHS=55oC
1540A
IRMS
RMSvalue
THS=55oC
2420A
IT
Continuous(direct)on-statecurrent
THS=55oC
2050A
R(th(J-h) Thermalresistancejunctionto
Clampingforce19.5kN
d.c.
.026OC/W
heatsinksurface
(withmountinggrease)
Half-wave
.028OC/W
3-phase
.030OC/W
CURRENTRATINGS―SINGLESIDECOOLED
IT(AV) Meanon-statecurrent
HalfwaveresistiveloadTHS=55oC
870A
IRMS
RMSvalue
THS=55oC
1365A
IT
Continuous(direct)on-statecurrent
THS=55oC
1060A
R(th(J-h) Thermalresistancejunctionto
Clampingforce19.5kN
d.c.
.06oC/W
heatsinksurface
(withmountinggrease)
Half-wave
.062oC/W
3-phase
.064oC/W
SURGERATINGS
ITRM
Repetitivepeakon-statecurrent
Sinusoidalwaveformconductionangle
14920A
ɬ=30oTHS=55oC
I2t
I2tforfusing
10mShalfsineTJ=125oC
2205000A2sec
3mShalfsineTJ=125oC
1540000A2sec
ITSM
Surge(non-repetitive)on-statecurrent
With50%VRSMTJ=125oC
21000A
dlT/dt Rateofriseofon-statecurrent
FromVDto1000A,Gatesource10V
100A/µs
5Ωrisetime0.5µs,TJ=125oC
dv/dt* Maxlinearrateofriseofoff-statevoltage
Voltage=67%VDRM,Tcase=125oC
300V/µs
*Highervaluesavailable.
GATERATINGS
VFGM
Peakforwardgatevoltage
Anodepositivewithrespecttocathode
30V
VFGN
Peakforwardgatevoltage
Anodenegativewithrespecttocathode
0.25V
VRGM
Peakreversegatevoltage
5V
IFGM
Peakforwardgatecurrent
Anodepositivewithrespecttocathode
10A
PGM
Peakgatepower
Pulsewidth=100µ
150W
PG
Meangatepower
10W
TEMPERATURE&FREQUENCYRATINGS
TVJ
Virtualjunctiontemperature
On-state(conduction)
135OC
Off-state(blocking)
125OC
Tstg
Storagetemperaturerange
-55to
125OC
F
Frequencyrange
10to
400Hz
Type
Number
Non-Repetitive
PeakVoltages
VDSMVRSM
Repetitive
PeakVoltages
VDRMVRRM
OUTLINEN
DCR1003SN1818DCR1004SN1818
1800
1700.
DCR1003SN1717DCR1004SN1717
1700
1600.
DCR1003SN1616DCR1004SN1616
1600
1500.
DCR1003SN1515DCR1004SN1515
1500
1400.
DCR1003SN1414DCR1004SN1414
1400
1300.
DCR1003SN1313DCR1004SN1313
1300
1200.
DCR1003SN1212DCR1004SN1212
1200
1100.
DCR1003SN1111DCR1004SN1111
1100
1000.
DCR1003SN1010DCR1004SN1010
1000
900.
DCR1003SN0909DCR1004SN0909
900
800.
DCR1003SN0808DCR1004SN0808
800
700.
DCR1003SN0707DCR1004SN0707
700
600.
DCR1003SN0606DCR1004SN0606
600
500.
DCR1003SN0505DCR1004SN0505
500
400.
DCR1003SN0404DCR1004SN0404
400
300.
DCR1003SN0303DCR1004SN0303
300
200.
DCR1003SN0202DCR1004SN0202
200
150.
DCR1003SN0101DCR1004SN0101
100
75.




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